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SI9113DB
Vishay Siliconix
Si9113 Demonstration Board
FEATURES
D D D D D D D D D D D D D D ISDN-NT Input Voltage Range 28 V to 99 V Non-Polar Input 3.3-V/120-mA, 40-V/12-mA Outputs With Up To 80% Efficiency Up to 68% Efficiency at 80-mW Load 40 V Isolated By 3 kV From Input And 3.3-V Output - Si9113D1 3.3 V, 40 V Isolated By 1.5 kV From Input/Each Other - Si9113D2 Current Mode Control, 0.6-V Fast Over-Current Protection Max 50% Duty Cycle Operation 1.3-MHz Error Amp Soft-Start <10-mA Supply Current for +VIN <18 V Programmed Start/Stop Internal Start-Up Circuit Power_Good Output
DESCRIPTION
As discussed in application note, AN728, the Si9113 power supply controller is an ideal choice for ISDN terminal equipment, where high efficiency at a low power level is one of most important criteria. Therefore, Vishay Siliconix has developed versions of a dual output flyback application demonstration boards, the Si9113D1 and the Si9113D2, which use different regulation schemes. These readily available demo boards are configured to deliver approximately 800 mW at 3.3-V, and40-V. These outputs and can be easily modified for other output voltages at approximately same power level. The flyback converters are designed to operate from a wide input voltage range of 28 V to 99 V and are polarity protected by a diode bridge. The Si9113D1 and Si9113D2, both operate at 20-kHz switching frequency to achieve the best possible efficiency. The transformer is selected to be slightly larger in this application so that the same area product would be good enough for an even lower window utilization factor (w.u.f.) transformer in order to meet the stringent requirements of clearance and creepage distances. The Si9113D1 senses and tightly regulates the main output VOUT1 (3.3 V), which has the common ground as input and the secondary output VOUT2 (40 V) is regulated to within $10% at 10% to100% load range, including the set point accuracy. Correspondingly. the transformer must be specified with tight tolerance to achieve the given set point accuracy. The 40-V output is isolated from both the input and 3.3-V output by minimum 3 kVrms isolation. The Si9113D2 uses the auxiliary output (VCC bootstrap winding) for sensing. Both VOUT1 (3.3 V) and VOUT2 (40 V) follow the auxiliary output, residing on one core and sharing the same flux. Both the outputs are isolated from the input as well as from each other by 1.5 kV and moderately regulated to $5%. Each demonstration board uses all surface mount components except the high voltage electrolyte capacitor and are fully assembled and tested for quick evaluation. Test points are provided for the power_good signal and the closed loop response measurement. Included in this document are the Bill-Of-Materials, Schematics, PCB Layout of the Demo Boards and actual waveforms/graphs.
The demonstration board layout is available in Gerber file format. Please contact your Vishay Siliconix sales representative or distributor for a copy.
ORDERING INFORMATION:
Si9113D1-- VOUT1 (3.3 V) Tightly regulated, non-isolated VOUT2 (40 V) Loosely regulated, 3 kV isolated Si9113D2-- VOUT1 (3.3 V) Moderately regulated, 1.5 kV isolated VOUT2 (40 V) Moderately regulated, 1.5 kV isolated
Document Number: 71117 29-Feb-00
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SI9113DB
Vishay Siliconix
POWER UP CHECK LIST AND OPERATION
The Si9113D1 and Si9113D2 are designed to operate in discontinuous mode at nominal line and load conditions. Both demo boards use the same operational procedure, as follows: 1 2 3 Visually inspect the PCB to be sure that all the components are intact and no foreign substance is lying on the board. Solder the leads at C1 negative and MOSFET Q1 drain to monitor the drain waveform on the oscilloscope. Reduce the source voltage to zero and connect it through the dc ammeter at VIN + and VIN -. Connect the dc voltmeter precisely across VIN + and VIN -. For the application where input is of fixed polarity, the diode bridge BR1 can be eliminated by shorting pin 1 to 4 and pin 2 to 3 to achieve even higher efficiency. 6 4 Connect the voltmeter precisely across VOUT1 - Com1 and VOUT2 - Com2 for the output voltage measurement. Connect the oscilloscope ground to C1 negative while the probe to Q1 drain to observe the switching waveforms. Slowly increase the input voltage while monitoring the input current meter. Note the input current is less than 10 mA at 18 VIN and continue to increase the voltage further till the circuit turns on at approximately 24 V. Set the input voltage to 48 V nominal and monitor the drain waveform, switching frequency, input and output ripple and noise. The efficiency, line, load and cross regulation can be measured by varing the line between 28 to 99 V, and the load between 10% and 100%.
5
7
ACTUAL WAVEFORMS AND PERFORMANCE
Drain Voltage and Current to reduce the leakage inductance. Refer to Figure 1 for the drain voltage and current waveforms. The current starting from zero indicates the discontinuous mode operation and absence of any leakage spike at drain shows the tight coupling between the windings.
The circuit is designed to operate in discontinuous mode at nominal line and full load. The transformer is cleverly designed
44.00 43.00 42.00 41.00 V OUT2 (V) 40.00 3.3 V @ 120 mA 39.00 38.00 37.00 36.00 0 VIN = 28 V Outputs - Full lLoad Ch1 - Primary Current (0.1A/div) Ch3 - Drain Voltage (20 V/div) 3.00 6.00 9.00 12.00 15.00 IOUT2 (mA) 3.3 V @ 12 mA
FIGURE 1. Drain Voltage and Current Waveform - Si9113D2
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FIGURE 2. VOUT2 (40 V) Load/cross Regulation - Si9113D1
Document Number: 71117 29-Feb-00
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SI9113DB
Vishay Siliconix
Output Regulation The output regulation of slave outputs depend upon the loading condition of main output. In Si9113D1, the VOUT1 (3.3 V) is tightly regulated to within 1%, while VOUT2 (40 V) follows the main output. Figure 2 depicts the typical load regulation of 40 V output, when the main output is at 10% and at full load condition. In Si9113D2, the VOUT1 and VOUT2 are both moderately regulated. Figures 3 and 4 show the 3.3-V and 40-V regulation with the outputs loaded at 10% to100% of the rated load. The
3.460 3.420 3.380 40 V @ 12 mA 3.340 V OUT1 (V) 3.300 3.260 3.220 3.180 3.140 0 25 50 75 IOUT1 (mA) 100 125 150 Vout2 (V) 40 V @ 1.2 mA 40.50 40.00 39.50 39.00 38.50 38.00 0 3.00 6.00 9.00 12.00 15.00 3.3 V @ 12 mA 3.3 V @ 120 mA
output voltages are essentially constant with respect to any variation of input voltage in case of both demo boards.
Output Ripple and Noise The tantalum chip capacitors are used for lower ESR and higher ripple current capability. Low cost aluminium capacitors can also be used where form fator and/or output ripple are of secondary importance. Also, a small additional LC filter can be added at 3.3-V output for further attenuation of ac component by even five to ten times. The Si9113D1 - Figure 5 and Si9113D2 - Figure 6 show the ripple at a full load and 48-V input.
42.00 41.50 41.00
IOUT2 (mA)
FIGURE 3. VOUT1 (3.3 V) Load/cross Regulation - Si9113D2
FIGURE 4. VOUT2 (40 V) Load/Cross Regulation - Si9113D2
VIN = 48 V Outputs = At Full Load Ch1 = 3.3 V (20 mV/div)) Ch3 = 40 V (100 mV/div)
VIN = 48 V Outputs = At Full Load Ch1 = 3.3 V (20 mV/div)) Ch3 = 40 V (100 mV/div)
FIGURE 5. Output Ripple and Noise - Si9113D1
Document Number: 71117 29-Feb-00
FIGURE 6. Output Ripple and Noise - Si9113D2
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SI9113DB
Vishay Siliconix
EFFICIENCY
90.00 80.00 70.00 Efficiency % Efficiency % 60.00 50.00 40.00 30.00 20.00 10.00 0.00 0 200 400 600 800 1000 VIN = 99 V VIN = 28 V VIN = 48 V 90.00 80.00 70.00 60.00 50.00 40.00 30.00 20.00 10.00 0.00 0 200 400 600 800 1000 VIN = 99 V VIN = 28 V VIN = 48 V
WO (mW)
WO (mW)
FIGURE 7. Converter Output Load vs Efficiency - Si9113D1
FIGURE 8. Converter Output Load vs Efficiency - Si9113D2
COMPENSATION
The closed loop response is observed at 48 VIN and full load at both outputs on the venable by applying the error across R8 and measuring the gain, phase change encountered by the signal at both ends of R8. Refer to Figures 9 and 10 for the actual response.
60 50 40 30 20 Gain (dB) 10 0 -10 -20 -30 -40 -50 -60 10 100 1,000 Frequency (Hz) 10,000 Gain Phase
180 150 120 90 60 Gain (dB) 30 Phase 0 -30 -60 -90 -120 -150 -180 50,000
80 60 40 Gain 20 0 -20 -40 -60 -80 10 Phase
120 90 60 30 Phase 0 -30 -60 -90 -120 10000
100
1000 Frequency (Hz)
FIGURE 9. Measured Close Loop Response - Si9113D1
FIGURE 10. Measured Closed Loop Response-Si9113D2
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Document Number: 71117 29-Feb-00
SI9113DB
Vishay Siliconix
Dynamic Load Response The step load is applied at 1A/mS slew rate at one output, while keeping the other output at rated load. Refer to Figures 11 through 14.
VIN = 48 V VOUT1 = Step -12 to 120 mA Ch1 = VOUT1 (3.3 V) Ch4 = Load (50 mA/div) Slew Rate = 1A/msec
VIN = 48 V VOUT2 = Step Load 1.2 to 12 mA VOUT1 = At Full Load Ch1 = VOUT2 (40 V) Ch4 = Load (10 mA/div) Slew Rate = 1A/msec
FIGURE 11. VOUT1 (3.3 V) Transient Load Response - Si9113D1
FIGURE 12. VOUT2 (40 V) Transient Load Response - Si9113D1
VIN = 48 V VOUT1 = Step Load 12 mA - 120 mA VOUT2 = At Full Load Ch1 = VOUT1 (3.3 V) Ch4 = 100 mA/div Slew Rate = 1A/msec
VIN = 48 V VOUT2 = Step Load 1.2 mA - 12 mA VOUT1 = At Full Load Ch1 = VOUT2 (40 V) Ch4 = 10 mA/div Slew Rate = 1A/msec
FIGURE 13. VOUT1 (3.3 V) Transient Load Response--Si9113D2
FIGURE 14. VOUT2 (40 V) Transient Load Response--Si9113D2
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SI9113DB
Vishay Siliconix
SCHEMATIC, PCB LAYOUT AND BILL OF MATERIAL (SI9113D1)
P1 VIN 4 3 P2 GND
BR1 AC + AC - DF02S R13 3 D5* BZX84C15 1 C4 1 mF P3 3.3 V 2.7 W 1 2 + C1 22 mF 160 V D1 ESIG D3 B130LB 8 7 NS3 9
T1 XFMR_LPE9080 D2 1 C2 0.1 mF 160 V (NU) 6 ESIG C10 NS2 2.2 mF 50 V 3 + 1 3
P3 40 V
D4* BZX84C43
NP 5
P6 COM2
TP2
R8 51 W C5 0.1 mF C12 0.1 mF P5 COM1 R6 5.1 W R12 5.1 kW (NU) C10 2.2 mF 50 V
R9 20 kW R1 R10 13 kW 1 MW C7 0.001 mF C6 0.1 mF 8 OSCIN 9 OSCOUT 10 SS 11 VREF 12 FB 13 COMP 14 R2 C8 300 kW 0.01 mF C13 100 pF START VIN STOP 1 ICS 2 PWR_G 3 GND 4 DR 5 VCC 6 7
2, 4 (Q1) 1, 2, 5, 6, (Q01) 1 (Q1) 3 (Q01) Q1 BSP89 (NU) Q01 Si3420DV 3 (Q1) 4 (Q01) R11 1 kW C9 0.01 mF C3 220 pF R7 2W 1/ W 2
Si9113
R3 5.1 MW R4 1 MW R5 3.96 MW *Optional
TP1 PWR_GD
Dual Output Flyback Converter with Tightly Regulated Main Output
FIGURE 15. Demo Board--Si9113D1
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Document Number: 71117 29-Feb-00
SI9113DB
Vishay Siliconix
FIGURE 16. Silk Screen--Si9113D1
FIGURE 17. Top Layer--Si9113D1
FIGURE 18. Bottom Layer--Si9113D1
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SI9113DB
Vishay Siliconix
TABLE 1. BILL OF MATERIALS
Item
1 2 3 4 5 6 7 8 9 10 11 12
Si9113D1
Vendor Part #
CRCW08051004FRT1 CRCW08053003FRT1 CRCW08055104FRT1 CRCW08053964FRT1 CRCW080551JRT1 WSC-1/2 CRCW0805510JRT1 CRCW08052002FRT1 CRCW08051302FRT1 CRCW08051001FRT1 CRCW08055101FRT1 CRCW080527JRT1
Qty
2 1 1 1 1 1 1 1 1 1 1 1
Designator
"R1, R4" R2 R3 R5 R6 R7 R8 R9 R10 R11 R12 (NU) R13
Part Type
1 MW 300 kW 5.1 MW 3.96 MW 5.1 W 2W 51 W 20 kW 13 kW 1 kW 5.1 kW 2.7 W 22 mF 0.1 mF 220 pF 1 mF 0.1 mF 0.001 mF 0.01 mF 2.2 mF 220 mF 100 pF
Description
"RES, 1%, 1/8 W" "RES, 1%, 1/8 W" "RES, 1%, 1/8 W" RES, 1%,
1/ W" 8
Footprint
0805 0805 0805 0805 0805 2010 0805 0805 0805 0805 0805 0805
Manufacturer
Vishay Dale Vishay Dale Vishay Dale Vishay Dale Vishay Dale Vishay Dale Vishay Dale Vishay Dale Vishay Dale Vishay Dale Vishay Dale Vishay Dale
RES, 5%, 1/8 W" "RES, 1%,
1/ W, 2
PWR Metal"
"RES, 5%, 1/8 W" "RES, 1%, 1/8 W" "RES, 1%,
1/ W" 8
"RES, 1%, 1/8 W" "RES, 1%, 1/8 W (NU)" "RES, 5%,
1/ W" 8
13 14 15 16 17 18 19 20 21 22
1 1 1 1 3 1 2 1 1 1
C1 C2 (NU) C3 C4 "C5, C6, C12" C7 "C8, C9" C10 C11 C13
"CAP, ELEC, 160 V, VR " "CAP, CER, 200 V" "CAP, CER" "CAP, CER, 25 V" "CAP, CER" "CAP, CER" "CAP, CER" "CAP, TAN, 50 V" "CAP, TAN, 6.3 V" "CAP, CER"
RB.2/.4 1206 0805 1210 0805 0805 0805 595D_C 594D_C 0805
UVR2C220MEA VJ1210Y104KXC VJ0805Y221KXXAT VJ1210U105ZXAA VJ0805Y104KXXAT VJ0805Y102KXXAT VJ0805Y103KXXAT 595D225X0050C2T 594D227X06R3C2T VJ0805Y101KXXAT
Nichicon Vishay Vitramon Vishay Vitramon Vishay Vitramon Vishay Vitramon Vishay Vitramon Vishay Vitramon Vishay Sprague Vishay Sprague Vishay Vitramon
23 24 25 26
2 1 1 1
"D1, D2" D3 D4* D5
ES1G B130LB BZX84C43 BZX84C15
"Diode, 1 A" "Schottky Diode, 1 A" "Zener Diode, 41 V" Zener Diode
SMA SMB SOT-23 SOT-23
ES1G B130LB BZX84C43 BZX84C15
Vishay Liteon Vishay Liteon Vishay Liteon Vishay Dale
27
1
T1
LPE-9080-A413
Transformer
XFMR_LPE9080
LPE-9080-A413
Vishay Liteon
28
1
BR1
DF04S
Bridge
BR1
Vishay Liteon
29 30
1 1
Q1 (NU) Q01
BSP89 Si3420DV
N-Channel DMOSFET (NU) N-Channel MOSFET
SOT-223 TSOP-6
BSP89 Si3420DV
Philips Semiconductors Vishay Siliconix
31
1
U1
Si9113
Power IC
SO-14
Si9113
Vishay Siliconix
32 33 *Optional
2 6
"TP1, TP2" P1 TO P6
Test Point "PWR, GND"
1-Pin Header 1-Pin Header
TP1 TP1
Multi-Source Multi-Source
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Document Number: 71117 29-Feb-00
SI9113DB
Vishay Siliconix
SCHEMATIC, PCB LAYOUT AND BILL OF MATERIAL (SI9113D2)
P1 VIN 4 3 P2 GND
BR1 AC + AC - DF02S R13 2.7 W 1 2 + C1 22 mF 160 V D1 ESIG 8 NS3 C4 1 mF R9 89 kW R10 12.7 kW R1 1 MW C7 0.001 mF C6 0.1 mF 8 OSCIN 9 OSCOUT 10 SS 11 VREF 12 FB 13 COMP 14 R2 C8 300 kW 0.01 mF C2 100 pF START VIN STOP 1 ICS 2 C9 0.01 mF R3 5.1 MW R4 1 MW R5 3.96 MW *Optional 1 kW C3 470 pF PWR_G 3 R11 GND 4 DR 5 VCC 6 7 C5 0.1 mF R6 5.1 W 7 5
T1 LPE9080 4
D2 ESIG 3 + 1
P3 40 V D4* BZX84C43 P6C OM2 P4 3.3 V
C10 NS2 2.2 mF 50 V 3
R8 51 W TP2
NP 9
2
D3 B130LB
NS1 6 1
C11 220 mF 10 V
+
R12 5.1 kW (NU)
C12 0.1 mF
1, 2, 5, 6, (Q01) 2, 4 (Q1) 3 (Q01) 1 (Q1) Q1 BSP89(NU) Q01 Si3420DV 3 (Q1) 4 (Q01)
P5 COM
1
Si9113
R7 2W 1/ W 2
TP1 PWR_GD
Dual Output Flyback Converter with Moderately Regulated Outputs
FIGURE 19. Demo Board--Si9113D2
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SI9113DB
Vishay Siliconix
FIGURE 20. Silk Screen--Si9113D2
FIGURE 21. Top Layer--Si9113D2
FIGURE 22. Bottom Layer--Si9113D2
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SI9113DB
Vishay Siliconix
TABLE 2. BILL OF MATERIALS
Item
1 2 3 4 5 6 7 8 9 10 11 12
Si9113D2
Vendor Part #
CRCW08051004FRT1 CRCW08053003FRT1 CRCW08055104FRT1 CRCW08053964FRT1 CRCW080551JRT1 WSC-1/2 CRCW0805510JRT1 CRCW08058902FRT1 CRCW08051272FRT1 CRCW08051001FRT1 CRCW08055101FRT1 CRCW080527JRT1
Qty
2 1 1 1 1 1 1 1 1 1 1 1
Designator
"R1, R4" R2 R3 R5 R6 R7 R8 R9 R10 R11 R12 R13
Part Type
1 MW 300 kW 5.1 MW 3.96 MW 5.1 W 2W 51 W 89 kW 12.7 kW 1 kW 5.1 kW 2.7 W 22 mF 100 pF 470 pF 1 mF 0.1 mF 0.001 mF 0.01 mF 2.2 mF 220 mF
Description
"RES, 1%,
1/ W" 8
Footprint
0805 0805 0805 0805 0805 2010 0805 0805 0805 0805 0805 0805
Manufacturer
Vishay Dale Vishay Dale Vishay Dale Vishay Dale Vishay Dale Vishay Dale Vishay Dale Vishay Dale Vishay Dale Vishay Dale Vishay Dale Vishay Dale
"RES, 1%, 1/8 W" "RES, 1%,
1/ W" 8
"RES, 1%, 1/8 W" "RES, 5%, 1/8 W" "RES, 1%,
1/ W, PWR Metal" 2
"RES, 5%, 1/8 W" "RES, 1%,
1/ W" 8
"RES, 1%, 1/8 W" "RES, 1%, 1/8 W" "RES, 1%,
1/ W" 8
"RES, 5%, 1/8 W"
13 14 15 16 17 18 19 20 21
1 1 1 1 3 1 2 1 1
C1 C2 C3 C4 "C5, C6, C12" C7 "C8, C9" C10 C11
"CAP, ELEC, 160 V, VR" "CAP, CER" "CAP, CER" "CAP, CER, 25 V" "CAP, CER" "CAP, CER" "CAP, CER" "CAP, TAN, 50 V" "CAP, TAN, 6.3 V"
RB.2/.4 0805 0805 1210 0805 0805 0805 595D_C 594D_C
UVR2C220MEA VJ0805Y101KXXAT VJ0805Y471KXXAT VJ1210U105ZXAA VJ0805Y104KXXAT VJ0805Y102KXXAT VJ0805Y103KXXAT 595D225X0050C2T 594D227X06R3C2T
Nichicon Vishay Vitramon Vishay Vitramon Vishay Vitramon Vishay Vitramon Vishay Vitramon Vishay Vitramon Vishay Sprague Vishay Sprague
22 23 24
2 1 1
"D1, D2" D3 D4*
ES1G B130LB BZX84C43
"Diode, 1 A" "Schottky Diode, 1 A" "Zener Diode, 41 V"
SMA SMB SOT-23
ES1G B130LB BZX84C43
Vishay Liteon Vishay Liteon Vishay Liteon
25
1
T1
LPE-9080-A414
Transformer
XFMR_LPE908 0
LPE-9080-A414
Vishay Dale
26
1
BR1
DF04S
Bridge
BR1
Vishay Liteon
27 28
1 1
Q1 (NU) Q01
BSP89 Si3420DV
N-Channel DMOSFET (NU) N-Channel MOSFET
SOT-223 TSOP-6
BSP89 Si2320DS
Philips Semicoductors Vishay Siliconix
29
1
U1
Si9113
Power IC
SO-14
Si9113
Vishay Siliconix
30 31 *Optional
2 6
"TP1, TP2" P1 TO P6
Test Point "PWR, GND"
1-Pin Header 1-Pin Header
TP1 TP1
Multi-Source Multi-Source
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